sot-523 plastic-encapsulate mosfets mosfet (n-channel) features z high density cell design for low r ds(on) z voltage controlled small signal switch z rugged and reliable z high saturation current capability marking: k72 maximum ratings (t a =25 unless otherwise noted) parameter value units v ds drain-source voltage 60 v i d drain current 115 ma p d power dissipation 150 mw t j junction temperature 150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions m in t yp max unit drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 60 gate-threshold voltage v th(gs) v ds =v gs , i d =250 a 1 v gate-body leakage l gss v ds =0 v, v gs = 25 v 80 na zero gate voltage drain current i dss v ds =60 v, v gs =0 v 80 na on-state drain current i d(on) v gs =10 v, v ds =7 v 500 ma v gs =10 v, i d =500 ma 7 drain-source on-resistance r ds( on) v gs =5 v, i d =50 ma 7 ? forward trans conductance g fs v ds =10 v, i d =200 ma 80 500 ms v gs =10v, i d =500 ma 3.75 v drain-source on-voltage v ds(on) v gs =5v, i d =50 ma 0.375 v diode forward voltage v sd i s =115ma, v gs =0 v 0.55 1.2 v input capacitance c iss 50 output capacitance c oss 25 reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1mhz 5 pf switching time turn-on time t d(on) 20 turn-off time t d(off) v dd =25 v, r l =50 i d =500ma,v gen =10 v r g =25 40 ns so t -523 1. gate 2. source 3. drain 1 2 3 t stg storage temperature -55~+ 150 thermal resistance from junction to ambient symbol r ja 833 /w 2012-0 willas electronic corp. 2N7002T z preliminary
outline drawing dimensions in inches and (millimeters) sot-523 rev.d .043(1.10) .035(0.90) .069(1.75) .057(1.45) .004(0.10)min. .008(0.20) .004(0.10) .035(0.90) .028(0.70) .006(0.15) .014(0.35) .004(0.10)max. .067(1.70) .059(1.50) .035(0.90) .028(0.70) .01 4 (0.3 5 ) .010(0.25) 2012-0 willas electronic corp. sot-523 plastic-encapsulate mosfets 2N7002T preliminary
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